公开(公告)号：US20230197739A1

公开(公告)日：2023-06-22

申请号：US17998159

申请日：2020-07-24

Applicant: Zhuhai ACCESS Semiconductor Co., Ltd.

Inventor： Xianming CHEN ,  Lei FENG ,  Weiyuan YANG ,  Benxia HUANG ,  Yejie HONG

IPC: H01L27/13

CPC classification number: H01L27/13 ,  H01L28/10 ,  H01L28/40

Abstract: A capacitor and inductor embedded structure and a manufacturing method therefor, and a substrate are disclosed. The method includes: providing a metal plate; sequentially depositing and etching a first protective layer, a thin film dielectric layer, a second protective layer, and an upper electrode layer on an upper surface of the metal plate to form a thin film capacitor and a capacitor upper electrode; pressing an upper dielectric layer to the upper surface of the metal plate, covering the thin film capacitor and the capacitor upper electrode, and etching the metal plate to form a capacitor lower electrode; pressing a lower dielectric layer to a lower surface of the metal plate, and performing drilling on the upper dielectric layer and the lower dielectric layer to form inductor through holes and capacitor electrode through holes; electroplating metal to form an inductor and circuit layers.