To realize a highly reliable IGBT that suppresses the bipolar degradation by preventing the occurrence of a defect on a boundary between a contact region and a silicide layer. As a means to realize the above, a semiconductor device includes: a collector region that is formed on a lower surface of a semiconductor substrate and forms an IGBT; and a collector electrode that is formed on a lower surface of the collector region via a silicide layer. The collector region and the silicide layer contains aluminum, first metal being more easily bondable to silicon than aluminum, and second metal being more easily bondable to carbon than aluminum.