A wireless communication device can include switch circuitry. The switch circuitry can include stacks having a common gate node and a common body node, wherein a stack includes a metal-oxide-semiconductor field-effect transistor (MOSFET) having a body resistive element coupled to a body terminal of the MOSFET and the common body node a gate resistive element coupled to a gate terminal of the MOSFET and the common gate node. The switch circuitry can further include a self-biased MOSFET coupled to the common gate node and the common body node, a gate of the self-biased MOSFET configured to receive direct current (DC) bias with a low pass filter.