- 专利标题: ACOUSTIC RESONATOR
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申请号: US17579944申请日: 2022-01-20
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公开(公告)号: US20230022838A1公开(公告)日: 2023-01-26
- 发明人: Sang Heon HAN , Won HAN , Tae Hun LEE , Chang Hyun LIM , Ran Hee SHIN
- 申请人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2021-0095012 20210720
- 主分类号: H03H9/17
- IPC分类号: H03H9/17 ; H03H9/13 ; H03H9/02
摘要:
An acoustic resonator includes a substrate and a resonant portion. The resonant portion has a central portion in which a first electrode, a first piezoelectric layer, a second piezoelectric layer, and a second electrode are stacked in order on the substrate, and an extension portion extending outwardly from the central portion and including an insertion layer. A ratio of an average thickness of the first piezoelectric layer to an average thickness of the second piezoelectric layer is 18.4% to 40%.
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