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公开(公告)号：US20160373083A1
公开(公告)日：2016-12-22
申请号：US15184230
申请日：2016-06-16
发明人： Tae Kyung LEE , Sung HAN , Hwa Sun LEE , Seung Joo SHIN , Ran Hee SHIN
CPC分类号： H03H9/13 , H03H9/02149 , H03H9/173 , H03H9/54
摘要： A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode disposed on the substrate, and a piezoelectric layer disposed between the first electrode and the second electrode. At least one of the first electrode and the second electrode includes an alloy of molybdenum and tantalum.
摘要翻译： 体声波谐振器包括基板，设置在基板上的第一电极和第二电极以及设置在第一电极和第二电极之间的压电层。 第一电极和第二电极中的至少一个包括钼和钽的合金。
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公开(公告)号：US20220140811A1
公开(公告)日：2022-05-05
申请号：US17220119
申请日：2021-04-01
发明人： Tae Kyung LEE , Dae Hun JEONG , Ran Hee SHIN , Jin Suk SON , Hwa Sun LEE , Jae Goon AUM
摘要： A bulk acoustic wave resonator is provided. The resonator includes a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a temperature compensation layer disposed at least one of above and below the piezoelectric layer, wherein a material of the temperature compensation layer has a coefficient of thermal expansion of which a sign is opposite to a sign of a coefficient of thermal expansion of a material of the piezoelectric layer, and wherein a relation of a thickness of the temperature compensation layer and a thickness of the piezoelectric layer satisfies the following equation: 0.25
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公开(公告)号：US20200067483A1
公开(公告)日：2020-02-27
申请号：US16668118
申请日：2019-10-30
发明人： Ran Hee SHIN , Tae Kyung LEE , Sung HAN , Yun Sung KANG , Sung Sun KIM , Jin Suk SON , Jeong Suong YANG , Hwa Sun LEE , Eun Tae PARK
摘要： An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.
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公开(公告)号：US20170373665A1
公开(公告)日：2017-12-28
申请号：US15452090
申请日：2017-03-07
发明人： Tae Kyung LEE , Jae Sang LEE , Sung HAN , Sung Sun KIM , In Young KANG , Ran Hee SHIN
摘要： A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode formed on the substrate, and a piezoelectric layer provided between the first electrode and the second electrode. Either one or both of the first electrode and the second electrode include a molybdenum-tungsten alloy having a weight ratio of molybdenum to tungsten in a range of 3:1 to 1:3.
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公开(公告)号：US20170237408A1
公开(公告)日：2017-08-17
申请号：US15271579
申请日：2016-09-21
发明人： Sung HAN , Dae Ho KIM , Ran Hee SHIN , Hwa Sun LEE , Chang Hyun LIM , Tae Kyung LEE , Sung Sun KIM
CPC分类号： H03H9/17 , H03H3/02 , H03H9/02118 , H03H9/13 , H03H9/173 , H03H9/54 , H03H2003/021
摘要： A resonator includes a resonating portion including a first electrode, a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode; and a frame provided at an outer edge of the resonating portion, at least a portion of the frame covering an outer end portion of the second electrode.
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公开(公告)号：US20230318562A1
公开(公告)日：2023-10-05
申请号：US18319603
申请日：2023-05-18
发明人： Tae Kyung LEE , Je Hong KYOUNG , Sung Sun KIM , Jin Suk SON , Ran Hee SHIN , Hwa Sun LEE
CPC分类号： H03H9/02102 , H03H9/176 , H03H9/174 , H03H9/02031
摘要： A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).
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公开(公告)号：US20200252046A1
公开(公告)日：2020-08-06
申请号：US16418107
申请日：2019-05-21
发明人： Ran Hee SHIN , Tae Kyung LEE , Sung Jun LEE , Hwa Sun LEE , Je Hong KYOUNG , Sung Sun KIM , Jin Suk SON
摘要： A bulk acoustic wave resonator includes a substrate, a seed layer disposed on the substrate, a first electrode disposed on the seed layer and including an aluminum alloy layer containing scandium (Sc), a piezoelectric layer disposed on the first electrode and including a layer having a cation (Al) polarity, and a second electrode disposed on the piezoelectric layer.
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公开(公告)号：US20200036359A1
公开(公告)日：2020-01-30
申请号：US16356333
申请日：2019-03-18
发明人： Ran Hee SHIN , Tae Kyung LEE , Je Hong KYOUNG , Jin Suk SON , Hwa Sun LEE , Sung Sun KIM
IPC分类号： H03H9/13 , H01L41/047 , H01L41/187 , H03H9/02 , H01L41/316 , H03H3/02 , H03H9/17 , C22C21/00
摘要： A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant “c” to an in-plane lattice constant “a” (c/a) of less than 1.58.
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公开(公告)号：US20190149127A1
公开(公告)日：2019-05-16
申请号：US16224025
申请日：2018-12-18
发明人： Tae Kyung LEE , In Young KANG , Ran Hee SHIN , Jin Suk SON
CPC分类号： H03H9/171 , H03H3/02 , H03H9/02015 , H03H9/173 , H03H9/54
摘要： A bulk acoustic resonator includes a substrate, a first electrode disposed above the substrate, a piezoelectric body disposed on the first electrode and including a plurality of piezoelectric layers each including aluminum nitride with a doping material, and a second electrode disposed on the piezoelectric body, where at least one of the piezoelectric layers is a compressive piezoelectric layer formed under compressive stress.
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公开(公告)号：US20180351533A1
公开(公告)日：2018-12-06
申请号：US15875207
申请日：2018-01-19
发明人： Tae Kyung LEE , Jun LIM , Jong Woon KIM , Ran Hee SHIN , Sung Sun KIM
摘要： An acoustic resonator includes a membrane layer disposed on an insulating layer; a cavity formed by the insulating layer and the membrane layer; a resonating portion disposed on the cavity and having a first electrode, a piezoelectric layer, and a second electrode stacked thereon; a protective layer disposed on the resonating portion; and a hydrophobic layer formed on the protective layer.
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