发明公开
- 专利标题: CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-CHANGE MATERIAL
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申请号: US18130184申请日: 2023-04-03
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公开(公告)号: US20230263082A1公开(公告)日: 2023-08-17
- 发明人: Franck ARNAUD , David GALPIN , Stephane ZOLL , Olivier HINSINGER , Laurent FAVENNEC , Jean-Pierre ODDOU , Lucile BROUSSOUS , Philippe BOIVIN , Olivier WEBER , Philippe BRUN , Pierre MORIN
- 申请人: STMicroelectronics (Crolles 2) SAS , STMicroelectronics (Grenoble 2) SAS , STMicroelectronics (Rousset) SAS
- 申请人地址: FR Crolles
- 专利权人: STMicroelectronics (Crolles 2) SAS,STMicroelectronics (Grenoble 2) SAS,STMicroelectronics (Rousset) SAS
- 当前专利权人: STMicroelectronics (Crolles 2) SAS,STMicroelectronics (Grenoble 2) SAS,STMicroelectronics (Rousset) SAS
- 当前专利权人地址: FR Crolles; FR Grenoble; FR Rousset
- 优先权: FR 60543 2017.11.09
- 分案原申请号: US16184246 2018.11.08
- 主分类号: H10N70/00
- IPC分类号: H10N70/00 ; G11C13/00 ; H10B63/00 ; H10N70/20
摘要:
An integrated circuit includes a substrate with an active area, a first insulating layer, a second insulating layer, and a phase-change material. The integrated circuit further includes a heating element in an L-shape, with a long side in direct physical contact with the phase-change material and a short side in direct physical contact with a via. The heating element is surrounded by first, second, and third insulating spacers, with the first insulating spacer having a planar first sidewall in contact with the long side of the heating element, a convex second sidewall, and a planar bottom face in contact with the short side of the heating element. The second and third insulating spacers are in direct contact with the first insulating spacer and the long side of the heating element.
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