发明公开
- 专利标题： NOVEL THIN FILM RESISTOR
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申请号： US18141300申请日： 2023-04-28
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公开(公告)号： US20230268340A1公开(公告)日： 2023-08-24
- 发明人: Hung-Chih YU , Chien-Mao Chen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu City
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu City
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01C17/14 ; H01L21/8238 ; H01L27/01 ; H01C7/00
摘要：
A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.
公开/授权文献
- US12034003B2 Thin film resistor 公开/授权日：2024-07-09
信息查询
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