Discussed is a semiconductor light-emitting device that can include a first conductive electrode, a first conductive semiconductor layer having one surface on the first conductive electrode, and another surface on an undoped semiconductor layer, an active layer on the one surface of the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a second conductive electrode on the second conductive semiconductor layer, and a light-transmitting layer on a surface of the undoped semiconductor layer that is opposite to where the first conductive semiconductor layer is disposed with respect to the undoped semiconductor layer. The light-transmitting layer can include a material having electrical conductivity.