发明公开
- 专利标题： PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
-
申请号： US18200510申请日： 2023-05-22
-
公开(公告)号： US20230341780A1公开(公告)日： 2023-10-26
- 发明人: Tzu-Yang LIN , Ching-Yu CHANG , Chin-Hsiang LIN
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- 当前专利权人地址： TW Hsinchu
- 分案原申请号： US17150317 2021.01.15
- 主分类号： G03F7/30
- IPC分类号： G03F7/30 ; G03F7/38 ; G03F7/40 ; G03F7/36 ; G03F7/32 ; G03F7/039 ; G03F7/20 ; G03F7/004 ; G03F7/038
摘要：
A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from:
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.
公开/授权文献
信息查询
IPC分类:
