A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 µΩ·cm:








M

n+1




AX

n





­­­Formula 1







In Formula 1, M, A, X, and n are as described in the specification.