Invention Grant
- Patent Title: Semiconductor interconnect, electrode for semiconductor device, and method of preparing multielement compound thin film
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Application No.: US18342145Application Date: 2023-06-27
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Publication No.: US12014985B2Publication Date: 2024-06-18
- Inventor: Youngjae Kang , SangWoon Lee , Joungeun Yoo , Duseop Yoon
- Applicant: Samsung Electronics Co., Ltd. , AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.,AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- Current Assignee: Samsung Electronics Co., Ltd.,AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- Current Assignee Address: KR Gyeonggi-do; KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200093380 2020.07.27 KR 20210034244 2021.03.16
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/285 ; H01L23/528 ; H01L29/45
Abstract:
A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:
Mn+1AXn Formula 1
In Formula 1, M, A, X, and n are as described in the specification.
Mn+1AXn Formula 1
In Formula 1, M, A, X, and n are as described in the specification.
Public/Granted literature
Information query
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