Invention Publication
- Patent Title: TIMING CONTROL CIRCUIT OF MEMORY DEVICE WITH TRACKING WORD LINE AND TRACKING BIT LINE
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Application No.: US18344459Application Date: 2023-06-29
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Publication No.: US20230352085A1Publication Date: 2023-11-02
- Inventor: Xiu-Li YANG , Lu-Ping KONG , Kuan CHENG , He-Zhou WAN
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC Nanjing Company Limited , TSMC China Company Limited
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC Nanjing Company Limited,TSMC China Company Limited
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC Nanjing Company Limited,TSMC China Company Limited
- Current Assignee Address: TW Hsinchu; CN Nanjing; CN Shanghai
- Priority: CN 2011476130.4 2020.12.15
- Main IPC: G11C11/419
- IPC: G11C11/419 ; H03K3/037 ; G11C11/418

Abstract:
A circuit comprises a memory array, a tracking bit line and a timing control circuit. The memory array comprises a plurality of tracking cells. The tracking bit line is coupled between a first node and the plurality of tracking cells. The timing control circuit is coupled to the first node and comprises a Schmitt trigger. The Schmitt trigger generates a negative bit line enable signal in response to that a voltage level on the first node being below a low threshold voltage value of the Schmitt trigger. The timing control circuit generates a negative bit line trigger signal according to the negative bit line enable signal for adjusting voltage levels of a plurality of bit lines of the memory array.
Public/Granted literature
- US12198754B2 Timing control circuit of memory device with tracking word line and tracking bit line Public/Granted day:2025-01-14
Information query
IPC分类: