A three-dimensional (3D) memory device includes a memory cell, a top contact coupled to the memory cell, and a bottom contact coupled to the memory cell. The memory cell can include a pillar, an insulating layer surrounding the pillar, a first gate contact coupled to a word line, a second gate contact coupled to a plate line, and a third gate contact configured to control electrical charge conduction between the first gate contact and the second gate contact. The 3D memory device can utilize dynamic flash memory (DFM), increase storage efficiency, provide tri-gate control, provide different programming options, increase read, program, and erase operation rates, decrease leakage current, increase retention time, and decrease refresh rates.