- 专利标题: INTEGRATED CHIP WITH INTER-WIRE CAVITIES
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申请号: US18360066申请日: 2023-07-27
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公开(公告)号: US20230369231A1公开(公告)日: 2023-11-16
- 发明人: Hsin-Chieh Yao , Chung-Ju Lee , Chih Wei Lu , Hsi-Wen Tien , Wei-Hao Liao , Yu-Teng Dai , Hsin-Yen Huang , Chia-Tien Wu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 分案原申请号: US17355613 2021.06.23
- 主分类号: H01L23/538
- IPC分类号: H01L23/538 ; H01L21/768 ; H01L21/48 ; H01L23/532
摘要:
The present disclosure relates to an integrated chip comprising a substrate. A first conductive wire is over the substrate. A second conductive wire is over the substrate and is adjacent to the first conductive wire. A first dielectric cap is laterally between the first conductive wire and the second conductive wire. The first dielectric cap laterally separates the first conductive wire from the second conductive wire. The first dielectric cap includes a first dielectric material. A first cavity is directly below the first dielectric cap and is laterally between the first conductive wire and the second conductive wire. The first cavity is defined by one or more surfaces of the first dielectric cap.
公开/授权文献
- US12125795B2 Integrated chip with inter-wire cavities 公开/授权日:2024-10-22
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