- 专利标题： THREE DIMENSIONAL DEVICE FORMATION USING EARLY REMOVAL OF SACRIFICIAL HETEROSTRUCTURE LAYER
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申请号： US17744238申请日： 2022-05-13
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公开(公告)号： US20230369453A1公开(公告)日： 2023-11-16
- 发明人: Yan Zhang , Johannes M. van Meer , Sankuei Lin , Baonian Guo , Naushad K. Variam
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/423 ; H01L29/06 ; H01L29/786 ; H01L29/40
摘要：
A method for forming a nanosheet device. The method may include providing a heterostructure device stack above a semiconductor substrate. The method may include patterning the heterostructure device stack to define a dummy gate region, and before forming a source drain recess adjacent the dummy gate region, selectively removing a first set of sacrificial layers of the heterostructure device stack within the dummy gate region.
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