发明公开
- 专利标题: BULK-ACOUSTIC WAVE RESONATOR
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申请号: US18101267申请日: 2023-01-25
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公开(公告)号: US20230370048A1公开(公告)日: 2023-11-16
- 发明人: Kwang Su KIM , Jae Hyoung GIL , Moon Chul LEE , Yong Suk KIM , Dong Hyun PARK , Tae Kyung LEE
- 申请人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20220057960 2022.05.11
- 主分类号: H03H9/17
- IPC分类号: H03H9/17 ; H03H9/13 ; H03H9/02
摘要:
A bulk-acoustic wave resonator includes a substrate; a lower electrode, disposed on the substrate, comprising a first inclined surface and a second inclined surface; and an insertion layer disposed on an edge of the lower electrode. The first inclined surface extends from an inclined surface of the insertion layer in a region disposed inside the insertion layer. The second inclined surface extends from the first inclined surface in a region inside a region of the first inclined surface.
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