BAW RESONATOR AND BAW RESONATOR MANUFACTURING METHOD

    公开(公告)号:US20240080011A1

    公开(公告)日:2024-03-07

    申请号:US18112609

    申请日:2023-02-22

    CPC classification number: H03H9/172 H03H3/02

    Abstract: A bulk-acoustic wave (BAW) resonator includes a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion extending externally from the central portion, and an insertion layer and a loss prevention film are disposed in the extension portion between the substrate and the second electrode. The loss prevention film is formed to have a thickness of 50 Å to 500 Å. The insertion layer is stacked on the loss prevention film, and has a side surface opposing the central portion, the side surface is formed as a first inclined surface having a first inclination angle. The loss prevention film has a side surface opposing the central portion, the side surface is formed as a second inclined surface having a second inclination angle. The second inclination angle is formed to be greater than the first inclination angle.

    BULK ACOUSTIC RESONATOR
    10.
    发明申请

    公开(公告)号:US20230087049A1

    公开(公告)日:2023-03-23

    申请号:US17689333

    申请日:2022-03-08

    Abstract: A bulk acoustic resonator includes: a substrate; a protective layer; and a resonant portion including a piezoelectric layer, a first electrode disposed between the piezoelectric layer and the substrate, and a second electrode disposed between the piezoelectric layer and the protective layer. The protective layer covers a central portion of the resonant portion and a reflective portion surrounding the central portion and formed in a region in which an upper surface of the second electrode rises relative to the central portion. An upper surface of a portion of the protective layer covering the reflective portion is more gently inclined than the upper surface of a portion of the second electrode in the reflective portion.

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