- 专利标题: GAS MIXING SYSTEM FOR SEMICONDUCTOR FABRICATION
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申请号: US18227524申请日: 2023-07-28
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公开(公告)号: US20230372884A1公开(公告)日: 2023-11-23
- 发明人: Ming Shing LIN , Chin Shen HSIEH
- 申请人: Taiwan Semiconductro Manufacturing Company Limited
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductro Manufacturing Company Limited
- 当前专利权人: Taiwan Semiconductro Manufacturing Company Limited
- 当前专利权人地址: TW Hsin-Chu
- 分案原申请号: US16657016 2019.10.18
- 主分类号: B01F25/23
- IPC分类号: B01F25/23 ; C23C16/455 ; H01L21/67 ; B01F23/10 ; B01F35/91 ; B01F35/10
摘要:
A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.
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