- 专利标题: CIRCUIT FOR BIASING AN EXTERNAL RESISTIVE SENSOR
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申请号: US18191639申请日: 2023-03-28
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公开(公告)号: US20230386514A1公开(公告)日: 2023-11-30
- 发明人: Dario Livornesi , Alessio Emanuele Vergani , Paolo Pulici , Francesco Piscitelli , Enrico Mammei , Mojtaba Mohammadi Abdevand , Piero Malcovati , Edoardo Bonizzoni
- 申请人: STMicroelectronics S.r.l.
- 申请人地址: IT Agrate Brianza (MB)
- 专利权人: STMicroelectronics S.r.l.
- 当前专利权人: STMicroelectronics S.r.l.
- 当前专利权人地址: IT Agrate Brianza (MB)
- 主分类号: G11B5/60
- IPC分类号: G11B5/60 ; H03F1/02
摘要:
According to an embodiment, a circuit includes a biasing and a low-frequency recovery circuit. The biasing circuit includes a voltage digital to analog converter (V-DAC), a differential difference amplifier coupled to the V-DAC, a common-mode feedback (CMFB) amplifier coupled to the differential difference amplifier, and a first pair of transistors arranged as a high-impedance structure and coupled to the differential difference amplifier and the CMFB amplifier. The low-frequency recovery circuit includes a current digital to analog converter (C-DAC), a second pair of transistors arranged as a high-impedance structure and coupled to the first pair of transistors, a pair of resistors having a resistance value equal to half a resistance of the resistive sensor, the pair of resistors arranged between the second pair of transistors and coupled to the C-DAC, and a gain circuit coupled to shared nodes between the second pair of transistors and the pair of resistors.
公开/授权文献
- US12073860B2 Circuit for biasing an external resistive sensor 公开/授权日:2024-08-27
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