- 专利标题： TEMPLATE FOR NANOSHEET SOURCE DRAIN FORMATION WITH BOTTOM DIELECTRIC
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申请号： US17879088申请日： 2022-08-02
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公开(公告)号： US20230040606A1公开(公告)日： 2023-02-09
- 发明人: Benjamin Colombeau , Saurabh Chopra , Myungsun Kim , Balasubramanian Pranatharthiharan
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/06 ; H01L29/423
摘要：
Semiconductor devices and methods of manufacturing the same are described. The method includes forming a bottom dielectric isolation (BDI) layer on a substrate and depositing a template material in the source/drain trench. The template material is crystallized. Epitaxially growth of the source and drain regions then proceeds, which growth advantageously occurring on the bottom and sidewalls of the source and drain regions.
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