- 专利标题： IN-SITU SILICON OXYCARBIDE FORMATION IN CARBON-CARBON COMPOSITES
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申请号： US17845832申请日： 2022-06-21
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公开(公告)号： US20230406782A1公开(公告)日： 2023-12-21
- 发明人: ATTA KHAN
- 申请人： GOODRICH CORPORATION
- 申请人地址： US NC Charlotte
- 专利权人： GOODRICH CORPORATION
- 当前专利权人： GOODRICH CORPORATION
- 当前专利权人地址： US NC Charlotte
- 主分类号： C04B41/45
- IPC分类号： C04B41/45 ; C04B35/56 ; C04B35/52
摘要：
A method of making a carbon-carbon composite may comprise forming a silicon oxycarbide (SiOC) precursor sol and infiltrating a fibrous preform with the SiOC precursor sol. A SiOC forming heating treatment may be performed on the fibrous preform to form SiOC particles. The fibrous preform may be densified using chemical vapor infiltration to form a densified fibrous preform.
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