Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MAKING SEMICONDUCTOR DEVICE
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Application No.: US18179639Application Date: 2023-03-07
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Publication No.: US20230411319A1Publication Date: 2023-12-21
- Inventor: Yuya TSUTSUMI , Masaomi EMORI
- Applicant: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Applicant Address: JP Kanagawa
- Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Current Assignee Address: JP Kanagawa
- Priority: JP 22099360 2022.06.21
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
A semiconductor device includes a substrate having a first main surface and a second main surface opposite to the first main surface, and a first conductive layer covering the second main surface and including dendrites, wherein a via hole extending through the substrate and having an inner wall surface is formed in the substrate, and wherein the first conductive layer covers the inner wall surface.
Information query
IPC分类:
