A substrate processing method in a substrate processing apparatus includes (a) supplying a process gas that contains a gas containing halogen other than fluorine and a gas containing oxygen, to a processing container in which a stage is disposed, the stage being configured to place thereon a workpiece having an etching target film, (b) performing plasma processing on the workpiece by first plasma generated from the process gas under first plasma generation conditions, (c) performing plasma processing on the workpiece by second plasma generated from the process gas under second plasma generation conditions in which a condition of radio-frequency power and a processing time are different from those in the first plasma generation conditions, and other conditions are the same, and (d) repeating (b) and (c).