- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
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申请号: US17797295申请日: 2021-03-03
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公开(公告)号: US20230045793A1公开(公告)日: 2023-02-16
- 发明人: Takeshi ISHIDA
- 申请人: ROHM CO., LTD.
- 申请人地址: JP Kyoto
- 专利权人: ROHM CO., LTD.
- 当前专利权人: ROHM CO., LTD.
- 当前专利权人地址: JP Kyoto
- 优先权: JP2020-044368 20200313
- 国际申请: PCT/JP2021/008083 WO 20210303
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/423
摘要:
A semiconductor device 1 includes a base body 3 that includes a p type substrate 4 and an n type semiconductor layer 5 formed on the p type substrate 4 and includes an element region 2 having a transistor 40 with the n type semiconductor layer as a drain, a p type element isolation region 7 that is formed in a surface layer portion of the base body such as to demarcate the element region, and a conductive wiring 25 that is disposed on a peripheral edge portion of the element region and is electrically connected to the n type semiconductor layer. The transistor includes an n+ type drain contact region 14 that is formed in a surface layer portion of the n type semiconductor layer in the peripheral edge portion of the element region. The conductive wiring is disposed such as to cover at least a portion of an element termination region 30 between the n+ type drain contact region and the p type element isolation region.