- 专利标题： NITRIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR
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申请号： US17649565申请日： 2022-02-01
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公开(公告)号： US20230049717A1公开(公告)日： 2023-02-16
- 发明人: Toshiki HIKOSAKA , Hajime NAGO , Jumpei TAJIMA , Shinya NUNOUE
- 申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 申请人地址： JP Tokyo; JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 当前专利权人地址： JP Tokyo; JP Tokyo
- 优先权： JP2021-132235 20210816
- 主分类号： H01L29/36
- IPC分类号： H01L29/36 ; H01L29/20 ; H01L29/205 ; H01L29/778 ; H01L21/02
摘要：
According to one embodiment, a nitride semiconductor includes a base body, and a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N (0
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