- 专利标题: EPITAXIAL FIELD STOP REGION FOR SEMICONDUCTOR DEVICES
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申请号: US17804460申请日: 2022-05-27
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公开(公告)号: US20230049926A1公开(公告)日: 2023-02-16
- 发明人: Naveen GANAGONA , George CHANG
- 申请人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 申请人地址: US AZ Phoenix
- 专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址: US AZ Phoenix
- 主分类号: H01L29/739
- IPC分类号: H01L29/739 ; H01L29/10 ; H01L21/223 ; H01L21/265
摘要:
A semiconductor device includes a backside contact and a substrate. An epitaxial field stop region may be formed on the substrate with a graded doping profile that decreases with distance away from the substrate, and an epitaxial drift region may be formed adjacent to the epitaxial field stop region. A frontside device may be formed on the epitaxial drift region.