- 专利标题： MEMORY, MEMORY SYSTEM AND OPERATION METHOD OF MEMORY SYSTEM
-
申请号： US17532826申请日： 2021-11-22
-
公开(公告)号： US20230056231A1公开(公告)日： 2023-02-23
- 发明人: Munseon JANG , Hoiju CHUNG , Jang Ryul KIM
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 主分类号： G11C29/42
- IPC分类号： G11C29/42 ; G11C29/12 ; G11C29/00 ; G11C7/10
摘要：
A memory system includes a memory; and a memory controller which includes a spare buffer suitable for storing an error location in the memory and data at the location, and commands the memory to perform a spare read operation when a read operation needs to be performed in a region of the memory including the error location.
公开/授权文献
- US11817169B2 Memory, memory system and operation method of memory system 公开/授权日：2023-11-14
信息查询
