- 专利标题: SUBSTRATE STRUCTURE
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申请号: US17840082申请日: 2022-06-14
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公开(公告)号: US20230066456A1公开(公告)日: 2023-03-02
- 发明人: Pei-Geng Weng , Fang-Lin Tsai , Wei-Son Tsai , Yih-Jenn Jiang
- 申请人: SILICONWARE PRECISION INDUSTRIES CO., LTD.
- 申请人地址: TW Taichung City
- 专利权人: SILICONWARE PRECISION INDUSTRIES CO., LTD.
- 当前专利权人: SILICONWARE PRECISION INDUSTRIES CO., LTD.
- 当前专利权人地址: TW Taichung City
- 优先权: TW110131296 20210824
- 主分类号: H01L23/498
- IPC分类号: H01L23/498
摘要:
A substrate structure is provided with a first electrical contact pad formed on an insulating layer of a substrate body, where the first electrical contact pad includes a first pad portion disposed on the insulating layer and at least one first protruding portion embedded in the insulating layer, so that the first pad portion is electrically connected to a circuit layer in the insulating layer by a conductive blind via, and the first protruding portion is free from being electrically connected to the circuit layer, such that, through a design of the first protruding portion, all surfaces of a metal layer formed on the insulating layer can meet the requirement of coplanarity.
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