- 专利标题: METHOD AND SYSTEM OF OPERATING A BI-DIRECTIONAL DOUBLE-BASE BIPOLAR JUNCTION TRANSISTOR (B-TRAN)
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申请号: US18053839申请日: 2022-11-09
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公开(公告)号: US20230066664A1公开(公告)日: 2023-03-02
- 发明人: Alireza MOJAB , Daniel BRDAR , Ruiyang YU
- 申请人: IDEAL POWER INC.
- 申请人地址: US TX Austin
- 专利权人: IDEAL POWER INC.
- 当前专利权人: IDEAL POWER INC.
- 当前专利权人地址: US TX Austin
- 主分类号: H01L29/10
- IPC分类号: H01L29/10 ; H03K17/082 ; H01L29/747 ; H01L29/732
摘要:
Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper-main lead of the transistor, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.
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