- 专利标题： OPTICALLY CONTROLLED FIELD EFFECT TRANSISTOR
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申请号： US17931067申请日： 2022-09-09
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公开(公告)号： US20230070932A1公开(公告)日： 2023-03-09
- 发明人: Joseph Neil Merrett
- 申请人： Government of the United States as Represented by the Secretary of the Air Force
- 申请人地址： US OH Wright-Patterson AFB
- 专利权人： Government of the United States as Represented by the Secretary of the Air Force
- 当前专利权人： Government of the United States as Represented by the Secretary of the Air Force
- 当前专利权人地址： US OH Wright-Patterson AFB
- 主分类号： H01L31/113
- IPC分类号： H01L31/113
摘要：
A semiconductor structure configured to implement an optically controlled field effect transistor (FET). In one embodiment, a normally-off, optically controlled FET is realized as a semiconductor structure comprising various regions configured to implement a voltage controlled, normally on, high voltage FET region having integrated thereon a photoconductive region configured to reduce a gate-to-source voltage of the FET in response to light incident upon the photoconductive region so as to turn the FET on.
公开/授权文献
- US12113146B2 Optically controlled field effect transistor 公开/授权日：2024-10-08
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