公开(公告)号：US20230070932A1

公开(公告)日：2023-03-09

申请号：US17931067

申请日：2022-09-09

申请人： Government of the United States as Represented by the Secretary of the Air Force

发明人： Joseph Neil Merrett

IPC分类号： H01L31/113

摘要： A semiconductor structure configured to implement an optically controlled field effect transistor (FET). In one embodiment, a normally-off, optically controlled FET is realized as a semiconductor structure comprising various regions configured to implement a voltage controlled, normally on, high voltage FET region having integrated thereon a photoconductive region configured to reduce a gate-to-source voltage of the FET in response to light incident upon the photoconductive region so as to turn the FET on.