- 专利标题： WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME
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申请号： US17829679申请日： 2022-06-01
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公开(公告)号： US20230079680A1公开(公告)日： 2023-03-16
- 发明人: Keunwook SHIN , Kibum KIM , Kyung-Eun BYUN , Hyeonjin SHIN , Minhyun LEE , Changseok LEE
- 申请人： Samsung Electronics Co., Ltd. , SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- 申请人地址： KR Suwon-si; KR Seoul
- 专利权人： Samsung Electronics Co., Ltd.,SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- 当前专利权人： Samsung Electronics Co., Ltd.,SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- 当前专利权人地址： KR Suwon-si; KR Seoul
- 优先权： KR10-2021-0123368 20210915
- 主分类号： C01B32/186
- IPC分类号： C01B32/186 ; C01B32/188 ; H01L29/41 ; H01L29/40
摘要：
Provided are a wiring including a graphene layer and a method of manufacturing the wiring. The method may include growing a graphene layer on a substrate and doping the graphene layer with a metal. The graphene layer may be grown using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD).