- 专利标题: METHODS AND SYSTEMS FOR PHOTOVOLTAIC DEVICES USING SILICON PARTICLES
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申请号: US17931462申请日: 2022-09-12
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公开(公告)号: US20230081214A1公开(公告)日: 2023-03-16
- 发明人: David Berney NEEDLEMAN , Matthew ROBINSON , Nathanael FEHRENBACH , Jimmy MEI , Arnaud LEPERT
- 申请人: LEAP PHOTOVOLTAICS INC.
- 申请人地址: US CA San Francisco
- 专利权人: LEAP PHOTOVOLTAICS INC.
- 当前专利权人: LEAP PHOTOVOLTAICS INC.
- 当前专利权人地址: US CA San Francisco
- 主分类号: H01L31/0747
- IPC分类号: H01L31/0747 ; H01L31/074 ; H01L31/0224 ; H01L31/18 ; H01L31/20
摘要:
Photovoltaic devices and methods for fabricating a photovoltaic devices. The method includes applying a coating layer that surrounds each of a plurality of silicon particles. The method also includes implanting the plurality of silicon particles into a substrate layer such that an exposed portion of each of the plurality of silicon particles extends away from a surface of the substrate layer. The method further includes removing a portion of the coating layer that is positioned around the exposed portion of each of the plurality of silicon particles. The method also includes placing an insulator layer on the surface of the substrate layer. The method further includes placing a selective carrier transport layer on the exposed portion of each of the plurality of silicon particles.
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