公开(公告)号：US12125932B2

公开(公告)日：2024-10-22

申请号：US18689439

申请日：2021-10-12

申请人： BEIJING ZENITHNANO TECHNOLOGY CO., LTD.

发明人： Yuchun Zhang ,  Shudong Zhong

IPC分类号： H01L31/0725 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/043 ,  H01L31/0747

CPC分类号： H01L31/0725 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/0747 ,  H01L31/043

摘要： A stacked solar cell is provided. The stacked solar cell comprises: a light absorption layer group comprising an excitation layer, a first electron transport layer group provided on a first side surface of the excitation layer, and a first hole transport layer group provided on a second side surface of the excitation layer; and a heterojunction layer group, wherein a second electron transport layer is provided as a first side surface of the heterojunction layer group and is in contact with the first hole transport layer group, and a second hole transport layer is provided as a second side surface of the heterojunction layer group.

公开(公告)号：US20240186430A1

公开(公告)日：2024-06-06

申请号：US18439522

申请日：2024-02-12

申请人： Maxeon Solar Pte. Ltd.

发明人： KIERAN MARK TRACY ,  DAVID D. SMITH ,  VENKATASUBRAMANI BALU ,  ASNAT MASAD ,  ANN WALDHAUER

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/022441 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/50 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548

摘要： Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

公开(公告)号：US11973151B2

公开(公告)日：2024-04-30

申请号：US17928435

申请日：2021-12-28

申请人： Tongwei Solar (Chengdu) Co., Ltd. ,  Tongwei Solar (Meishan) Co., Ltd. ,  Tongwei Solar (Jintang) Co., Ltd. ,  Tongwei Solar (Hefei) Co., Ltd. ,  Tongwei Solar (Anhui) Co., Ltd.

发明人： Jinle Wang

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/20

CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/0747 ,  H01L31/202 ,  H01L31/208

摘要： Provided are a HJT cell having high photoelectric conversion efficiency and a method for preparing the same. The HJT cell includes an N-type crystalline silicon wafer. An intrinsic amorphous silicon layer, a SiO2 layer, a C-doped SiO2 layer, a doped N-type amorphous silicon layer, a TCO conductive layer and an electrode are sequentially disposed on a front surface of the N-type crystalline silicon wafer. An intrinsic amorphous silicon layer, a SiO2 layer, a C-doped SiO2 layer, a doped P-type amorphous silicon layer, a TCO conductive layer and an electrode are sequentially disposed on a back surface of the N-type crystalline silicon wafer. The doped P-type amorphous silicon layer includes a lightly B-doped amorphous silicon layer and a heavily B-doped amorphous silicon layer.

公开(公告)号：US11942561B2

公开(公告)日：2024-03-26

申请号：US17869513

申请日：2022-07-20

申请人： MAXEON SOLAR PTE. LTD.

发明人： Ratson Morad ,  Gilad Almogy ,  Itai Suez ,  Jean Hummel ,  Nathan Beckett ,  Yafu Lin ,  John Gannon ,  Michael J. Starkey ,  Robert Stuart ,  Tamir Lance ,  Dan Maydan

IPC分类号： H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/042 ,  H01L31/044 ,  H01L31/048 ,  H01L31/05 ,  H01L31/0747 ,  H01L31/18 ,  H02J3/38 ,  H02J3/46 ,  H02J5/00 ,  H02S40/32 ,  H02S40/34

CPC分类号： H01L31/02008 ,  H01L31/0201 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/042 ,  H01L31/044 ,  H01L31/048 ,  H01L31/0508 ,  H01L31/0512 ,  H01L31/0747 ,  H01L31/186 ,  H01L31/1876 ,  H01L31/188 ,  H02J3/381 ,  H02J3/46 ,  H02J5/00 ,  H02S40/32 ,  H02S40/34 ,  H02J2300/24 ,  Y02E10/50

摘要： A high efficiency configuration for a solar cell module comprises solar cells conductively bonded to each other in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.

公开(公告)号：US20240088313A1

公开(公告)日：2024-03-14

申请号：US18259977

申请日：2021-12-20

申请人： REC SOLAR PTE. LTD.

发明人： Muzhi TANG ,  Shu Yunn CHONG

IPC分类号： H01L31/0236 ,  H01L31/0747 ,  H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/0747 ,  H01L31/1812

摘要： A solar cell comprising a substrate having a front surface configured to face a light source in use, and a rear surface opposite the front surface. The front surface has a front surface morphology and the rear surface has a rear surface morphology. The front and rear surface morphologies are configured such that the front surface has a greater surface area than the rear surface. The solar cell also includes an emitter arranged on the rear surface of the substrate. Also disclosed is a method of forming a layered structure of a solar cell, which includes performing finishing processes such that a first (e.g. front) surface of a substrate has a greater surface area than a second (e.g. rear) surface. The method further includes providing a reflector layer that may be tuned to the morphology of the second surface.

公开(公告)号：US20230197876A1

公开(公告)日：2023-06-22

申请号：US16467105

申请日：2017-12-05

申请人： THE AUSTRALIAN NATIONAL UNIVERSITY

发明人： Di Yan ,  Andres Cuevas

IPC分类号： H01L31/0747 ,  H01L21/02 ,  C23C14/14 ,  C23C14/58

CPC分类号： H01L31/0747 ,  H01L21/02532 ,  H01L21/02381 ,  C23C14/14 ,  C23C14/5806

摘要： The invention relates to a process for fabricating a solar cell. The process comprises depositing a layer of amorphous silicon on a substrate using physical vapour deposition, said substrate being a layer of a dielectric disposed on a silicon wafer. The amorphous silicon is then annealed so as to generate a layer of polycrystalline silicon on the substrate.

公开(公告)号：US20230178673A1

公开(公告)日：2023-06-08

申请号：US17535813

申请日：2021-11-26

申请人： Samson Mil'shtein ,  Dhawal Narain Asthana

发明人： Samson Mil'shtein ,  Dhawal Narain Asthana

IPC分类号： H01L31/0747

CPC分类号： H01L31/0747

摘要： History of commercial production of solar cells made from polysilicon material (Eff =15 -17%) and from amorphous silicon (Eff = 9 - 12%) has accumulated understanding of deficiencies and limitations of these solar cells. The present design combines following technical requirements: a) ability to harvest energy from widest part of sun spectrum; b) offer highest values of absorption coefficient for photons of the selected part of sun spectrum; c) ensure highest efficiency of conversion of incident photons into electron-hole pairs or photocarriers while ensuring lowest recombination rate; d) The simplicity of fabrication and low cost of mass production.

公开(公告)号：US20230081214A1

公开(公告)日：2023-03-16

申请号：US17931462

申请日：2022-09-12

申请人： LEAP PHOTOVOLTAICS INC.

发明人： David Berney NEEDLEMAN ,  Matthew ROBINSON ,  Nathanael FEHRENBACH ,  Jimmy MEI ,  Arnaud LEPERT

IPC分类号： H01L31/0747 ,  H01L31/074 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/20

摘要： Photovoltaic devices and methods for fabricating a photovoltaic devices. The method includes applying a coating layer that surrounds each of a plurality of silicon particles. The method also includes implanting the plurality of silicon particles into a substrate layer such that an exposed portion of each of the plurality of silicon particles extends away from a surface of the substrate layer. The method further includes removing a portion of the coating layer that is positioned around the exposed portion of each of the plurality of silicon particles. The method also includes placing an insulator layer on the surface of the substrate layer. The method further includes placing a selective carrier transport layer on the exposed portion of each of the plurality of silicon particles.

公开(公告)号：US20220389257A1

公开(公告)日：2022-12-08

申请号：US17757030

申请日：2020-11-19

申请人： GENES'INK

发明人： Corinne VERSINI ,  Stéphanie LIMAGE ,  Alexandre KAUFFMANN ,  Virginie EL QACEMI ,  Louis-Dominique KAUFFMANN

IPC分类号： C09D11/52 ,  C09D11/033 ,  C09D11/037 ,  H01L31/0747 ,  C08K3/08 ,  C08K3/40

摘要： The present invention relates to formulations of ink based on nanoparticles of silver and of metal oxides. In particular, the present invention relates to formulations of ink based on nanoparticles of silver and of metal oxides, said inks being stable, having improved conductivity and making it possible to advantageously form electrodes and/or conductive tracks that are particularly suitable for photovoltaic cells, for example on a silicon and/or glass substrate.

公开(公告)号：US11502208B2

公开(公告)日：2022-11-15

申请号：US16679012

申请日：2019-11-08

申请人： SunPower Corporation

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/20 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0368

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.