- 专利标题： QUANTUM DEVICE, METHOD FOR READING THE CHARGE STATE, METHOD FOR DETERMINING A STABILITY DIAGRAM AND METHOD FOR DETERMINING SPIN CORRELATIONS
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申请号： US17899095申请日： 2022-08-30
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公开(公告)号： US20230086994A1公开(公告)日： 2023-03-23
- 发明人: Pierre-André MORTEMOUSQUE , Benoit BERTRAND , Baptiste JADOT , Tristan MEUNIER , Matias URDAMPILLETA , Maud VINET
- 申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- 申请人地址： FR Paris; FR Paris
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- 当前专利权人地址： FR Paris; FR Paris
- 优先权： FR2109107 20210831
- 主分类号： G05B19/4099
- IPC分类号： G05B19/4099 ; H01L27/18 ; H01L39/22 ; H01L39/24 ; G06N10/40
摘要：
A semiconductor device includes a layer of a semiconductor material in which is formed an active zone; a plurality of first gates forming a plurality of lines substantially parallel to each other and covering in part the active zone; a plurality of second gates forming a plurality of columns; at least one third gate, designated measurement gate, extending along an axis substantially parallel to the lines of the plurality of lines and in a direction opposite to the lines of the plurality of lines with respect to the active zone, and a first electrode and a second electrode situated on either side of the plurality of measurement gates in the active zone.
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