- 专利标题: LEVEL SENSING SHUT-OFF FOR A RATE-TRIGGERED ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
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申请号: US17491417申请日: 2021-09-30
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公开(公告)号: US20230093961A1公开(公告)日: 2023-03-30
- 发明人: Rajiv DAMODARAN PRABHA , Vishwanath JOSHI
- 申请人: TEXAS INSTRUMENTS INCORPORATED
- 申请人地址: US TX Dallas
- 专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址: US TX Dallas
- 主分类号: H02H9/04
- IPC分类号: H02H9/04 ; H01L27/02 ; H01L29/866
摘要:
A device includes a protected terminal, a reference terminal, and a rate-triggered circuit coupled to the protected terminal and to the reference terminal. The rate-triggered circuit is configured to provide an output voltage responsive to a ramp rate of a voltage at the protected terminal being greater than a rate threshold. The device also includes a transistor configured to shunt current from the protected terminal to the reference terminal responsive to the rate-triggered circuit output voltage, and a level-sensing circuit configured to turn off the transistor responsive to the voltage at the protected terminal being greater than a level-sense threshold.