A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold. The energy density satisfies at least one of conditions of a peak value of the energy density is lower than or equal to 44 J/cm2, a rising rate of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm3, and a range of depth where the energy density exceeds the reforming threshold is smaller than or equal to 30 μm.