公开(公告)号：US20230115673A1

公开(公告)日：2023-04-13

申请号：US17960847

申请日：2022-10-06

申请人： DENSO CORPORATION ,  National University Corporation Saitama University

发明人： Bahman SOLTANI ,  Koichiro YASUDA ,  Ryota TAKAGI ,  Tomoki KAWAZU ,  Shunsuke SOBAJIMA ,  Yutaro ISSHIKI ,  Sodai NOMURA ,  Hideaki SHIRAI ,  Yohei YAMADA ,  Junichi IKENO

IPC分类号： B23K26/38 ,  B23K26/402

摘要： A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold. The energy density satisfies at least one of conditions of a peak value of the energy density is lower than or equal to 44 J/cm2, a rising rate of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm3, and a range of depth where the energy density exceeds the reforming threshold is smaller than or equal to 30 μm.

公开(公告)号：US20230073379A1

公开(公告)日：2023-03-09

申请号：US17900950

申请日：2022-09-01

申请人： DENSO CORPORATION

发明人： Sodai NOMURA ,  Tomoki KAWAZU ,  Bahman SOLTANI ,  Yutaro ISSHIKI ,  Nobuyuki NUNOME ,  Shiro OKITA ,  Riku ONISHI

IPC分类号： B28D5/00 ,  B23K26/53

摘要： A manufacturing method of semiconductor wafers includes preparing a ingot having a first major surface and a second major surface in a back side of the first major surface, a peeling layer being formed in the ingot along the first major surface; and applying a load to the ingot from outside thereof with respect to a surface direction along the first major surface such that a moment with a supporting point which is a first end of the ingot in the surface direction acts on the ingot, thereby peeling a wafer precursor from the ingot. Also, a dynamic force may be applied to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, thereby peeling the wafer precursor from the ingot.