Some embodiments include an integrated assembly having a first deck with first memory cells arranged in first tiers disposed one atop another, and having a second deck over the first deck and with second memory cells arranged in second tiers disposed one atop another. Cell-material-pillars pass through the first and second decks. The cell-material-pillars have first inter-deck inflections associated with a boundary between the first and second decks. The cell-material-pillars are arranged within a configuration which includes a first memory-block-region and a second memory-block-region. A panel is between the first and second memory-block-regions. The panel has a second inter-deck inflection associated with the boundary between the first and second decks. Some embodiments include methods of forming integrated assemblies.