Invention Application
- Patent Title: MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US17972887Application Date: 2022-10-25
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Publication No.: US20230132780A1Publication Date: 2023-05-04
- Inventor: Tatsuya SASAKI , Masaru TANABE
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2021-177544 20211029
- Main IPC: G03F1/60
- IPC: G03F1/60 ; G03F1/54 ; G03F1/24
Abstract:
[Problem to be Solved by the Disclosure]
Provided is a mask blank substrate.
[Means for Solving the Problem]
The mask blank substrate includes two opposing main surfaces, consists of a glass material containing SiO2 and TiO2, has a first region in one main surface side, the first region is a region within a 132 mm×104 mm square including a center portion in the one main surface and which is a region extending from the one main surface toward the other main surface up to a position of 500 μm in depth, an inner region of the substrate excluding the first region has a locally non-uniform portion, a ratio of Ti content rate to Si content rate (Ti/Si) of the non-uniform portion differs from Ti/Si of the inner region excluding the non-uniform portion by 0.25% or more, and the variation of Ti content rate in the inner region of the substrate excluding the first region and the non-uniform portion is 0.06 mass % or less.
Provided is a mask blank substrate.
[Means for Solving the Problem]
The mask blank substrate includes two opposing main surfaces, consists of a glass material containing SiO2 and TiO2, has a first region in one main surface side, the first region is a region within a 132 mm×104 mm square including a center portion in the one main surface and which is a region extending from the one main surface toward the other main surface up to a position of 500 μm in depth, an inner region of the substrate excluding the first region has a locally non-uniform portion, a ratio of Ti content rate to Si content rate (Ti/Si) of the non-uniform portion differs from Ti/Si of the inner region excluding the non-uniform portion by 0.25% or more, and the variation of Ti content rate in the inner region of the substrate excluding the first region and the non-uniform portion is 0.06 mass % or less.
Information query
