- 专利标题: SEMICONDUCTOR DEVICE
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申请号: US17669319申请日: 2022-02-10
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公开(公告)号: US20230137806A1公开(公告)日: 2023-05-04
- 发明人: Huai-Ying Huang , Yu-Ming Lin
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L27/11
- IPC分类号: H01L27/11 ; H01L23/535
摘要:
A semiconductor device includes a semiconductor structure, a logic circuit, a plurality of first memory cells and through vias. The logic circuit is disposed at a first level over the semiconductor substrate. The first memory cells are disposed at a second level over the semiconductor substrate, wherein the second level is stacked on top and overlapped with the first level. Each of the first memory cells include a latch circuit and conductive elements. The latch circuit is formed of N-type field effect transistors (NFETs) and P-type field effect transistors (PFETs). The conductive elements are extending above the NFETs and the PFETs and electrically coupled to the NFETs and the PFETs. The through vias are extending from the second level to the first level and electrically connecting the conductive elements to the logic circuit by a vertical conduction path.
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