- 专利标题: IC HAVING ELECTRICALLY ISOLATED WARPAGE PREVENTION STRUCTURES
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申请号: US17512958申请日: 2021-10-28
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公开(公告)号: US20230139898A1公开(公告)日: 2023-05-04
- 发明人: Christlyn Faith Hobrero Arias , Rafael Jose Lizares Guevara
- 申请人: Texas Instruments Incorporated
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L23/31 ; H01L21/71
摘要:
Disclosed aspects include a semiconductor die including a substrate having a semiconductor surface including circuitry. A top metal layer is above the semiconductor surface including top metal lines that are electrically connected through a metal stack including metal interconnects that electrically connect to the circuitry. The top metal lines are configured in a primary orientation that collectively represents at least 50% of a total length of the top metal lines in a first direction. The top metal layer includes bond pads exposed from a passivation layer. The metal features are positioned lateral to and not directly electrically connected to the top metal layer and/or are positioned on the passivation layer. At least a majority of a total area of the metal features is not over metal interconnects. The metal features have a length direction oriented in a second direction that is at least essentially perpendicular relative to the primary orientation.
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