Invention Publication
- Patent Title: 3D-STACKED MEMORY WITH RECONFIGURABLE COMPUTE LOGIC
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Application No.: US18369079Application Date: 2023-09-15
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Publication No.: US20240004547A1Publication Date: 2024-01-04
- Inventor: Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F15/78 ; G06F9/30
Abstract:
A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
Public/Granted literature
- US12197726B2 3D-stacked memory with reconfigurable compute logic Public/Granted day:2025-01-14
Information query
