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公开(公告)号：US20210311634A1
公开(公告)日：2021-10-07
申请号：US17353393
申请日：2021-06-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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公开(公告)号：US11079936B2
公开(公告)日：2021-08-03
申请号：US15143248
申请日：2016-04-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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Patent Agency Ranking
公开(公告)号：US20250147659A1
公开(公告)日：2025-05-08
申请号：US19016833
申请日：2025-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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公开(公告)号：US20170255390A1
公开(公告)日：2017-09-07
申请号：US15143248
申请日：2016-04-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
CPC classification number: G06F3/0605 , G06F3/0611 , G06F3/0625 , G06F3/0635 , G06F3/0659 , G06F3/0673 , G06F9/30196 , G06F15/785 , Y02D10/13
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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公开(公告)号：US12197726B2
公开(公告)日：2025-01-14
申请号：US18369079
申请日：2023-09-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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公开(公告)号：US20240004547A1
公开(公告)日：2024-01-04
申请号：US18369079
申请日：2023-09-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
CPC classification number: G06F3/0605 , G06F15/785 , G06F3/0611 , G06F3/0625 , G06F3/0635 , G06F3/0659 , G06F3/0673 , G06F9/30196 , Y02D10/00
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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公开(公告)号：US11789610B2
公开(公告)日：2023-10-17
申请号：US17353393
申请日：2021-06-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Mu-Tien Chang , Prasun Gera , Dimin Niu , Hongzhong Zheng
CPC classification number: G06F3/0605 , G06F3/0611 , G06F3/0625 , G06F3/0635 , G06F3/0659 , G06F3/0673 , G06F9/30196 , G06F15/785 , Y02D10/00
Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.
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