- 专利标题: METHOD FOR MANUFACTURING A SUBSTRATE
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申请号: US18470975申请日: 2023-09-20
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公开(公告)号: US20240014027A1公开(公告)日: 2024-01-11
- 发明人: Pascal Guenard , Marcel Broekaart , Thierry Barge
- 申请人: Soitec
- 申请人地址: FR BERNIN
- 专利权人: Soitec
- 当前专利权人: Soitec
- 当前专利权人地址: FR BERNIN
- 优先权: FR 01519 2015.07.17
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H10N30/50 ; H10N30/072 ; H10N30/853
摘要:
A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.
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