Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US18195657Application Date: 2023-05-10
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Publication No.: US20240014284A1Publication Date: 2024-01-11
- Inventor: Seungmin SONG , Myungil KANG , Hyojin KIM , Doyoung CHOI
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220083050 2022.07.06
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L27/092 ; H01L29/786 ; H01L29/775 ; H01L23/528 ; H01L29/417 ; H01L29/06

Abstract:
A semiconductor device includes an active region on a substrate; channel layers on the active region spaced apart from each other and including lower and upper channel layers; an intermediate insulating layer between an uppermost lower channel layer and a lowermost upper channel layer; a gate intersecting the active region and including a lower gate electrode surrounding the lower channel layers and an upper gate electrode surrounding the upper channel layers; an insulating pattern between the upper and lower gate electrodes on a side of the intermediate insulating layer; source/drain regions on at least one side of the gate, and including lower source/drain regions connected to the lower channel layers and upper source/drain regions connected to the upper channel layers; and a contact plug including a horizontal extension portion connected to the lower source/drain regions, and a vertical extension portion connected to the horizontal extension portion.
Information query
IPC分类: