Invention Publication
- Patent Title: SEMICONDUCTOR MEMORY DEVICE
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Application No.: US18132196Application Date: 2023-04-07
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Publication No.: US20240015981A1Publication Date: 2024-01-11
- Inventor: JEON IL LEE , SERYEUN YANG , HYERAN LEE
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220083397 2022.07.06
- Main IPC: H10B51/30
- IPC: H10B51/30 ; H10B51/20 ; H10B51/40

Abstract:
A semiconductor memory device is provided. The semiconductor memory device includes: a bit line that extends in a first direction; first and second word lines that extend in a second direction and cross the bit line; an active pattern on the bit line between the first and second word lines, the active pattern including first second vertical parts that are opposite to each other, and a horizontal part that extends between the first and second vertical parts; a first data storage pattern between the first word line and the first vertical part of the active pattern; a second data storage pattern between the second word line and the second vertical part of the active pattern; and a source line connected to the active pattern, the source line extending the first direction and crossing the first word line and the second word line.
Information query