A method and apparatus for heating a transparent component within a semiconductor processing chamber is described. The transparent component is heated using a transparent heater coupled to the transparent component. The transparent heater includes a support base, an electrode layer, and a capping layer. The electrode layer is a heating element. The transparent heater has an optical transparency of greater than about 80% at a wavelength which is emitted by one or more radiation sources within the processing chamber. The transparent heater is a flexible transparent heater or is formed of a plurality of sub-heaters.