An ultrasound device includes: ultrasonic transducer cavities; a membrane comprising a silicon layer that seals the ultrasonic transducer cavities; electrode regions configured to control vibration of the membrane; and a complementary metal-oxide-semiconductor (CMOS) substrate including integrated circuitry that is electrically coupled to the electrode regions. The ultrasonic transducer cavities are disposed between the membrane and the integrated circuitry along a vertical direction of the ultrasound device.