A method used in forming a memory array comprising strings of memory cells comprises forming a lower stack comprising vertically-alternating different-composition lower first tiers and lower second tiers. The lower stack comprises lower channel-material strings extending through the lower first tiers and the lower second tiers. An upper stack is formed directly above the lower stack. The upper stack comprises vertically-alternating different-composition upper first tiers and upper second tiers. The upper stack comprises upper channel-material strings of select-gate transistors. Individual of the upper channel-material strings are directly electrically coupled to individual of the lower channel-material strings. The upper and lower first tiers are conductive at least in a finished-circuitry construction. The upper and lower second tiers are insulative and comprise insulative material. An insulator tier comprising insulator material is directly below a lowest of the upper first tiers and directly above an uppermost of the lower first tiers. The insulator material is of different composition from that of the insulative material of the upper second tiers and of different composition from that of the insulative material of the lower second tiers. Other embodiments, including structure, are disclosed.